Product Summary

The FDD6690 is a 40V N-Channel PowerTrench MOSFET. It has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. The applications of the FDD6690 are Inverter, Power Supplies.

Parametrics

FDD6690 absolute maximum ratings: (1)Drain to Source Voltage:40V; (2)Gate to Source Voltage:±20V; (3)Drain Current:Continuous (Package limited):50A, Continuous(Silicon limited):57A, Continuous:15.2A, Pulsed:100A; (4)Max Pulse Diode Current:100A; (5)Drain-Source Avalanche Energy:153mJ; (6)Power Dissipation: TC= 25℃:44W, TA= 25℃:3.1W, TA= 25℃:1.3W; (7)Operating and Storage Junction Temperature Range:-55℃ to +150℃.

Features

FDD6690 features: (1)Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A; (2)Max rDS(on) = 11.0mΩ at VGS = 4.5V, ID = 11A; (3)Fast Switching; (4)RoHS Compliant.

Diagrams

FDD6690 test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FDD6690A
FDD6690A

Fairchild Semiconductor

MOSFET 30V N-Ch PowerTrench

Data Sheet

Negotiable 
FDD6690A_Q
FDD6690A_Q

Fairchild Semiconductor

MOSFET 30V N-Ch PowerTrench

Data Sheet

0-1: $0.32
1-25: $0.31
25-100: $0.30
100-250: $0.29
FDD6690S
FDD6690S

Fairchild Semiconductor

MOSFET 30V N-Ch PowerTrench

Data Sheet

Negotiable